Giant intrinsic carrier mobilities in graphene and its bilayer.

  title={Giant intrinsic carrier mobilities in graphene and its bilayer.},
  author={Sergey V. Morozov and Kostya S. Novoselov and Mikhail I. Katsnelson and Fred Schedin and Daniel C Elias and John A. Jaszczak and SUPARNA DUTTASINHA},
  journal={Physical review letters},
  volume={100 1},
We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements show that mobilities higher than 200 000 cm2/V s are achievable, if extrinsic disorder is eliminated. A sharp (thresholdlike) increase in resistivity observed above approximately 200 K is unexpected but can qualitatively be understood within a… 

Universal scaling of resistivity in bilayer graphene

We report the temperature dependent electrical transport properties of gated bilayer graphene devices. We see a clear evidence of insulating behavior due to electron-hole charge puddles. The

Intrinsic mobility in graphene.

  • R. ShishirD. Ferry
  • Physics
    Journal of physics. Condensed matter : an Institute of Physics journal
  • 2009
Recent studies have shown that a high K dielectric solvent screens the impurities for room temperature transport in graphene and the mobility has been found to increase by orders of magnitude. This

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In theory, graphene should exhibit very high carrier mobility, however its measured mobility is usually much lower. This discrepancy between theory and empirical observations is believed to be due to

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Impurity correlations offer a self-consistent explanation to the puzzling sublinear carrier-density dependence of conductivity commonly observed in monolayer graphene samples on substrates.

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Giant intrinsic carrier mobilities in graphene and its bilayer

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