Giant Electroresistance in Ferroelectric Tunnel Junctions

@article{Zhuravlev2005GiantEI,
  title={Giant Electroresistance in Ferroelectric Tunnel Junctions},
  author={Mikhail Ye. Zhuravlev and Renat F. Sabirianov and Sitaram S. Jaswal and Evgeny Y. Tsymbal},
  journal={Physical Review Letters},
  year={2005},
  volume={94},
  pages={246802}
}
The interplay between the electron transport in metal-ferroelectric-metal junctions with ultrathin ferroelectric barriers and the polarization state of a barrier is investigated. Using a model which takes into account screening of polarization charges in metallic electrodes and direct quantum tunneling across a ferroelectric barrier, we calculate the change in the tunneling conductance associated with the polarization switching. We find the conductance change of a few orders of magnitude for… 
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References

SHOWING 1-10 OF 12 REFERENCES
Solid-State Physics
These are a set of notes I have made, based on lectures given by M.Moore at the University of Manchester Jan-June ’08. Please e-mail me with any comments/corrections: jap@watering.co.uk.
Annu
  • Rev. Mater. Sci. 30, 263
  • 2000
Tunneling in Solids (Academic
  • New York, 1969). 0 20 40 b d=3nm d=2nm P (μC/cm2) d=1nm 1 2 3 4 10 101 102 103 P=40μC/cm2 P=20μC/cm2 G R /G L d (nm) a FIG. 4. GER ratio, GR=GL, as a function of ferroelectric barrier thickness d for different values of polarization (a) and as a function of polarization P for different bar
  • 2005
Science 304
  • 1650
  • 2004
Science 304
  • 1606
  • 2004
Appl. Phys. Lett
  • Appl. Phys. Lett
  • 2003
Nature (London) 422
  • 506
  • 2003
Annu. Rev. Mater. Sci
  • Annu. Rev. Mater. Sci
  • 2000
Nature (London) 391
  • 874
  • 1998
Electronic address: tsymbal@unl
  • Electronic address: tsymbal@unl
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