Germanium substrate loss during low temperature annealing and its influence on ion-implanted phosphorous dose loss

@inproceedings{Ioannou2008GermaniumSL,
  title={Germanium substrate loss during low temperature annealing and its influence on ion-implanted phosphorous dose loss},
  author={Nikolas Ioannou and Dimitrios Skarlatos and Christos Tsamis and Christoforos A. Krontiras and Stavroula N. Georga and Astolfi Christofi and David S. McPhail},
  year={2008}
}
In this work we demonstrate germanium loss from uncapped substrates during low temperature drive-in annealing in inert ambient. An Arrhenius law with an activation energy of 2.03 eV describes the measured loss rate of germanium as a function of temperature. Accurate simulations of implanted phosphorous profiles in nonpassivated substrates have been performed considering the extracted germanium loss rate. A capping layer on the germanium surface reduces phosphorous dose loss, with Si3N4 being… CONTINUE READING

Citations

Publications citing this paper.
SHOWING 1-10 OF 10 CITATIONS

Development of germanium charge-coupled devices

  • Astronomical Telescopes + Instrumentation
  • 2018
VIEW 1 EXCERPT
CITES METHODS

Laser Spike Annealing for Shallow Junctions in Ge CMOS

  • IEEE Transactions on Electron Devices
  • 2017
VIEW 1 EXCERPT

Diffusion Suppression of Delta Doped Phosphorus in Germanium by Implantation of Nitrogen

  • 2016 21st International Conference on Ion Implantation Technology (IIT)
  • 2016
VIEW 1 EXCERPT
CITES BACKGROUND