Germanium photodetectors with induced p-n junctions

@article{Hsieh1982GermaniumPW,
  title={Germanium photodetectors with induced p-n junctions},
  author={Y H Hsieh and H G Card},
  journal={IEEE Transactions on Electron Devices},
  year={1982},
  volume={29},
  pages={1414-1420}
}
An experimental investigation has been made of optoelectronic carrier transport processes in Au-Ge contacts and their dependence on temperature, which shows that these devices behave as "induced" p+-n junctions rather than as Schottky barriers. The dark currents are due predominantly to minority-carrier injection in forward bias, and to generation in the… CONTINUE READING