Germanium nitride layers prepared by supersonic r.f. plasma jet

  title={Germanium nitride layers prepared by supersonic r.f. plasma jet},
  author={Lubom{\'i}r Soukup and Vratislav Peřina and Lubomir Jastrabik and Milo{\vs} {\vS}{\'i}cha and Petr Pokorn{\'y} and Rodney J. Soukup and Mihaly Novak and Josef Zemek},
Abstract Rutherford backscattering spectroscopy (RBS) and X-ray photoelectron spectroscopy (XPS) have been used to characterize Ge x N y films grown on Si substrates. The films were deposited in a plasma chemical reactor by a radio frequency (r.f.)-generated supersonic plasma jet. The Ge nozzle of the r.f. electrode was reactively sputtered in the plasma jet generated in the nitrogen and the germanium nitride films were created in the reactor. The RBS method showed that the ratio Ge:N in the… CONTINUE READING