Germanene termination of Ge2Pt crystals on Ge(110).

  title={Germanene termination of Ge2Pt crystals on Ge(110).},
  author={Pantelis Bampoulis and Lushan Zhang and Alireza Safaei and Raoul van Gastel and Bene Poelsema and Harold J. W. Zandvliet},
  journal={Journal of physics. Condensed matter : an Institute of Physics journal},
  volume={26 44},
  • P. Bampoulis, L. Zhang, +3 authors H. Zandvliet
  • Published 2014
  • Materials Science, Physics, Medicine
  • Journal of physics. Condensed matter : an Institute of Physics journal
We have investigated the growth of Pt on Ge(1 1 0) using scanning tunneling microscopy and spectroscopy. The deposition of several monolayers of Pt on Ge(1 1 0) followed by annealing at 1100 K results in the formation of 3D metallic Pt-Ge nanocrystals. The outermost layer of these crystals exhibits a honeycomb structure. The honeycomb structure is composed of two hexagonal sub-lattices that are displaced vertically by 0.2 Å with respect to each other. The nearest-neighbor distance of the atoms… Expand
Intercalation of Si between MoS2 layers
A combined experimental and theoretical study of the growth of sub-monolayer amounts of silicon (Si) on molybdenum disulfide (MoS2) finds compelling evidence that the deposited Si atoms intercalate between the MoS2 layers. Expand
Growth of germanium on Au(111): formation of germanene or intermixing of Au and Ge atoms?
The high surface sensitivity of TOF-DRS allows us to confirm the coexistence of Au and Ge atoms in the top layer for all stages of growth, including at sample temperatures higher than about 420 K. Expand
Evidence for Germanene growth on epitaxial hexagonal (h)-AlN on Ag(1 1 1).
First principles calculations, performed in the density functional theory (DFT) framework, supported the experimental RHEED and XAS findings, providing evidence for the epitaxial 2-D Ge layer formation on h-AlN/Ag(1 1 1) template. Expand
Single-layer Dual Germanene Phases on Ag(111)
Two-dimensional (2D) honeycomb lattices beyond graphene promise new physical properties such as quantum spin Hall effect. While there have been claims of growth of such lattices (silicene, germanene,Expand
Bandgap opening in hydrogenated germanene
We have studied the hydrogenation of germanene synthesized on Ge2Pt crystals using scanning tunneling microscopy and spectroscopy. The germanene honeycomb lattice is buckled and consists of twoExpand
Ge2Pt hut clusters: A substrate for germanene
The formation and structure of Ge2Pt clusters was studied in order to understand their germanene termination layer. The Ge2Pt clusters are formed by depositing a few layers of Pt on a Ge(110)Expand
Epitaxial growth of massively parallel germanium nanoribbons by segregation through Ag(1 1 0) thin films on Ge(1 1 0)
Abstract We investigate the epitaxial growth of low-dimensional nanostructures formed by surface segregation of germanium on single crystalline Ag(1 1 0) thin films supported by a Ge(1 1 0) template.Expand
Electrochemical Formation of Germanene: pH 4.5
Germanene is a single layer allotrope of Ge, with a honeycomb structure similar to graphene. This report concerns the electrochemical formation of germanene in a pH 4.5 solution. The studies wereExpand
Growth of germanium-silver surface alloys followed by in situ scanning tunneling microscopy: Absence of germanene formation
Theoretical studies have shown that new physical properties such as tunable gap openings or quantum spinHall effects could be expected from group-IV graphene analogs (silicene, germanene, stanene).Expand
Structural and electronic properties of Pt induced nanowires on Ge(110)
The structural and electronic properties of Pt induced nanowires on Ge(110) surfaces have been studied by scanning tunneling microscopy and low energy electron microscopy. The deposition of aExpand


The Ge(0 0 1) surface
Although germanium (Ge) (0 0 1) has a relatively small surface unit cell, this surface displays a wealth of fascinating phenomena. The Ge(0 0 1) surface is a prototypical example of a systemExpand
LEED investigation of germanium surfaces cleaned by sublimation of sulphide films; structural transitions on clean Ge(110) surface
Abstract Sublimation of deposited germanium sulphide films at the temperatures as low as 350°C results in the appearance of LEED patterns of clean surfaces of germanium. In the interface betweenExpand
sp2-like hybridization of silicon valence orbitals in silicene nanoribbons
Silicene nanoribbons grown on a silver (110) substrate have been studied by reflection electron energy loss spectroscopy as a function of the electron beam incidence angle α. The spectra, taken atExpand
Electronic and energetic properties of Ge(110) pentagons
The electronic and energetic properties of the elementary building block, i.e. a five-membered atom ring (pentagon), of the Ge(110) surface was studied by scanning tunneling microscopy andExpand
Epitaxial growth of a silicene sheet
Using atomic resolved scanning tunneling microscopy, we present here the experimental evidence of a silicene sheet (graphenelike structure) epitaxially grown on a close-packed silver surfaceExpand
Experimental evidence for epitaxial silicene on diboride thin films.
It is shown that two-dimensional, epitaxial silicene forms through surface segregation on zirconium diboride thin films grown on Si wafers and that the buckling and thus the electronic properties of silicenes are modified by epitaxials strain. Expand
Reconstructions and phase transition of clean Ge(110)
Abstract The structure of the clean Ge(110) surface is characterized between room temperature and the Ge melting temperature using scanning tunneling microscopy (STM) and low energy electronExpand
The instability of silicene on Ag(111)
We have used low energy electron microscopy to directly visualize the formation and stability of silicene layers on a Ag(111) substrate. Theoretical calculations call into question the stability ofExpand
Evidence of graphene-like electronic signature in silicene nanoribbons
We report on the electronic properties of straight, 1.6 nm wide, silicene nanoribbons on Ag(110), arranged in a one-dimensional grating with a pitch of 2 nm, whose high-resolution scanning tunnelingExpand
Ge-on-Si films obtained by epitaxial growing: edge dislocations and their participation in plastic relaxation
Pure edge 90° misfit dislocations (MDs) are the most effective linear defects that combine the substrate and the film with different lattice parameters. A system consisting of a nonstressed film andExpand