Geometry and composition comparisons between c-plane disc-like and m-plane core-shell InGaN/GaN quantum wells in a nitride nanorod.


With the nano-imprint lithography and the pulsed growth mode of metalorganic chemical vapor deposition, a regularly-patterned, c-axis nitride nanorod (NR) array of quite uniform geometry with simultaneous depositions of top-face, c-plane disc-like and sidewall, m-plane core-shell InGaN/GaN quantum well (QW) structures is formed. The differences of geometry… (More)
DOI: 10.1364/OE.20.015859