Generation and annihilation of boron – oxygen-related recombination centers in compensated p-and n-type silicon

@inproceedings{Lim2010GenerationAA,
  title={Generation and annihilation of boron – oxygen-related recombination centers in compensated p-and n-type silicon},
  author={Bianca Lim and Fiacre E. Rougieux and Daniel MacDonald and Karsten Bothe and Jan Holger Schmidt},
  year={2010}
}
The impact of boron–oxygen-related recombination centers as well as their defect kinetics have been intensely studied in boron-doped oxygen-rich p-type crystalline silicon. Experimental data for the defect in simultaneously boronand phosphorus-doped compensated pand n-type silicon, however, is sparse. In this study, we present time-resolved carrier lifetime measurements on Czochralski-grown silicon Cz-Si doped with both boron and phosphorus under illumination at 30 °C defect generation as well… CONTINUE READING
Highly Cited
This paper has 22 citations. REVIEW CITATIONS
17 Citations
2 References
Similar Papers

Citations

Publications citing this paper.
Showing 1-10 of 17 extracted citations

References

Publications referenced by this paper.
Showing 1-2 of 2 references

Carrier mobilities in multicrystalline silicon wafers made from UMG - Si

  • J. Schmidt
  • Phys . Status Solidi C

The impact of dopant compensation on the boron - oxygen defect in p - and n - type crystalline silicon

  • A. Liu Macdonald, F. Rougieux, A. Cuevas, B. Lim, J. Schmidt
  • Appl . Phys . Lett . J . Appl . Phys .

Similar Papers

Loading similar papers…