Generation Recombination Noise in Dual Channel AlGaN/GaN High Electron Mobility Transistor

Abstract

Generation-recombination noise from dual channel MOCVD-grown AlGaN/GaN/AlGaN/GaN HEMTs on sapphire substrate was observed. Local levels with activation energies Ea = 140 meV, Eb= 188 meV and Ec = 201 meV were identified. Devices showed reasonably low values of Hooge parameter (1.06 times 10-4) at room temperature in addition to superior transistor… (More)

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