Generating spin currents in semiconductors with the spin Hall effect.

@article{Sih2006GeneratingSC,
  title={Generating spin currents in semiconductors with the spin Hall effect.},
  author={Vanessa Sih and Wayne Heung Lau and Robert C. Myers and Viva R. Horowitz and Arthur C. Gossard and David D. Awschalom},
  journal={Physical review letters},
  year={2006},
  volume={97 9},
  pages={
          096605
        }
}
We investigate electrically induced spin currents generated by the spin Hall effect in GaAs structures that distinguish edge effects from spin transport. Using Kerr rotation microscopy to image the spin polarization, we demonstrate that the observed spin accumulation is due to a transverse bulk electron spin current, which can drive spin polarization nearly 40 microns into a region in which there is minimal electric field. Using a model that incorporates the effects of spin drift, we determine… 
Spin Hall effects
In solid-state materials with strong relativistic spin-orbit coupling, charge currents generate transverse spin currents. The associated spin Hall and inverse spin Hall effects distinguish between
Drift and diffusion of spins generated by the spin Hall effect
Electrically generated spin accumulation due to the spin Hall effect is imaged in n-GaAs channels using Kerr rotation microscopy, focusing on its spatial distribution and time-averaged behavior in a
Macroscopic transport of a current-induced spin polarization
Experimental studies of spin transport in a two-dimensional electron gas hosted by a triple GaAs/AlGaAs quantum well are reported. Using time-resolved Kerr rotation, we observed the precession of the
Electrical manipulation of spin -orbit coupling in semiconductor heterostructures
The spin-orbit interaction offers an avenue for the electrical generation and manipulation of electron spin polarization in semiconductors without magnetic materials or magnetic fields. In
Manipulation of Spins and Coherence in Semiconductors
The ability to optically measure coherent ensembles of spin-polarized carriers in semiconductors has enabled many advances in the study of spin dynamics. Recent experiments reveal new capabilities to
Spin Hall effect devices.
TLDR
The experimental results that, since the first experimental observation of the spin Hall effect less than 10 years ago, have established the basic physical understanding of the phenomenon, and the role that several of thespin Hall devices have had in the demonstration of spintronic functionalities and physical phenomena are reviewed.
Spin hall effect in semiconductor structures with spatially inhomogeneous spin relaxation
The extrinsic spin Hall effect in samples with coordinate-dependent relaxation time of the spin was studied. It was shown that the spin Hall effect in this case results in not only spatial separation
Kinetic investigation of the extrinsic spin Hall effect induced by skew scattering
A study of the kinetics of the extrinsic spin Hall conductivity induced by skew scattering is performed using the fully microscopic kinetic spin Bloch equation approach to the (001) GaAs symmetric
Current-Induced Spin Polarization in Nonmagnetic Semiconductors
  • Y. Qi, M. Flatté
  • Physics
    Journal of Superconductivity and Novel Magnetism
  • 2018
The use of spontaneous electron spin polarization in nonmagnetic semiconductors avoids the transport challenges of electron spin injection from magnetic materials as well as packing constraints of
Spin Hall Effect
Since the electrons have an internal degree of freedom, spin, they are characterized not only by charge density and electric current, but also by spin density and spin current. The spin current is
...
1
2
3
4
5
...