Generalized scaling theory and its application to a ¼ micrometer MOSFET design

@article{Baccarani1984GeneralizedST,
  title={Generalized scaling theory and its application to a ¼ micrometer MOSFET design},
  author={G.. Baccarani and M. R. Wordeman and R. H. Dennard},
  journal={IEEE Transactions on Electron Devices},
  year={1984},
  volume={31},
  pages={452-462}
}
In this paper we present a generalized scaling theory which allows for an independent scaling of the FET physical dimensions and applied voltages, while still maintaining constant the shape of the electric-field pattern. Thus two-dimensional effects are kept under control even though the intensity of the field is allowed to increase. The resulting design flexibility allows the design of FET's with quarter-micrometer channel length to be made, for either room temperature or liquid-nitrogen… CONTINUE READING
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