Generalized model for the optical absorption edge in a-Si:H.

@article{Datta1989GeneralizedMF,
  title={Generalized model for the optical absorption edge in a-Si:H.},
  author={Datta and Woollam},
  journal={Physical review. B, Condensed matter},
  year={1989},
  volume={39 3},
  pages={
          1953-1954
        }
}
  • Datta, Woollam
  • Published 15 January 1989
  • Physics
  • Physical review. B, Condensed matter
We have reanalyzed the published optical absorption coefficient data for a-Si:H and introduced a divergence temperature, a new concept in the physics of these materials. Copyright © 1989 The American Physical Society URL: http://link.aps.org/abstract/PRB/v39/p1953 DOI: 10.1103/PhysRevB.39.1953 PACS: 78.50.Ge, 72.80.Ng 
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16 Citations

16 Citations

Citation Type

Citation Type

Defect absorption and optical transitions in hydrogenated amorphous silicon
A re-examination of experimental evidence on the spectral dependence of the optical transition matrix element associated with thin-film silicon
We analyze the error associated with the optical transition matrix element spectral dependencies for hydrogenated amorphous silicon and crystalline silicon found by Jackson et al. (Phys Rev B…
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A quantitative characterization of the optical absorption spectrum associated with hydrogenated amorphous silicon
We propose a quantitative means of characterizing the optical absorption spectrum associated with an amorphous semiconductor. In particular, for a representative hydrogenated amorphous silicon…
Effects of annealing on the optical properties of hydrogenated amorphous carbon films
The Urbach focus and hydrogenated amorphous silicon
We critically examine the validity of the Urbach “focus” concept for the case of hydrogenated amorphous silicon. Our approach involves an analysis of a broad assortment of hydrogenated amorphous…
Optical transitions and the mobility edge in amorphous semiconductors: A joint density of states analysis
We determine the contributions to the joint density of states function attributable to the various types of optical transitions that occur within an amorphous semiconductor. We consider four types of…
The role that conduction band tail states play in determining the optical response of hydrogenated amorphous silicon
An empirical density of states and joint density of states analysis of hydrogenated amorphous silicon: a review
A number of empirical models for the valence band and conduction band hydrogenated amorphous silicon density of states functions are presented. Then, a relationship between these density of states…
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References

SHOWING 1-4 OF 4 REFERENCES
Review B
  • Review B
  • 1989
Nebraska 68588-0511 Abstract We have reanalyzed the published optical absorption coefficient data for a-Si:H and introduced a divergence temperature, a new concept in the physics of these materials
  • Submitted July
  • 1988
DOI: 10.1103/PhysRevB
  • DOI: 10.1103/PhysRevB
  • 1953
PACS: 78.50.Ge, 72.80
  • PACS: 78.50.Ge, 72.80