Generalized diffusion-reaction model for the low-field charge-buildup instability at the Si-SiO2 interface.

@article{Ogawa1995GeneralizedDM,
  title={Generalized diffusion-reaction model for the low-field charge-buildup instability at the Si-SiO2 interface.},
  author={Ogawa and Shiono},
  journal={Physical review. B, Condensed matter},
  year={1995},
  volume={51 7},
  pages={4218-4230}
}
  • Ogawa, Shiono
  • Published 1995 in Physical review. B, Condensed matter
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