Generalized Charge-Based Model of Double-Gate Junctionless FETs, Including Inversion


In this brief, we have developed a charge-based model for the symmetric double-gate junctionless (JL) field effect transistor (FET) that also accounts for the inversion layer when the gate voltage is biased in deep depletion. Basically, this approach represents a generalization of a former model and aims at giving a unified description of JL FETs beyond the… (More)


3 Figures and Tables

Slides referencing similar topics