General Agreement on Investment: Departure from the Investment Agreement Patchwork

@inproceedings{Gugler2007GeneralAO,
  title={General Agreement on Investment: Departure from the Investment Agreement Patchwork},
  author={Philippe Gugler and Vladim{\'i}r Tom{\vs}{\'i}k},
  year={2007}
}
A nonvolatile semiconductor memory is disclosed. This nonvolatile semiconductor memory includes a memory cell string containing a selection transistor and at least one cell transistor which is connected to the selection transistor and has a floating gate. This memory further includes a bias circuit for, when the selection transistor is unselected, supplying a potential different from the ground potential to the gate of the cell transistor connected to the unselected selection transistor. 

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