GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current

@article{Hutin2010GeOIPS,
  title={GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current},
  author={Louis Hutin and Cyrille Le Royer and J.-F. Damlencourt and J Isingspin glassesAlexander K. Hartmann and Helen Grampeix and Vincent Mazzocchi and Claude Tabone and Bernard Previtali and Arnaud Pouydebasque and Maud Vinet and Olivier Faynot},
  journal={IEEE Electron Device Letters},
  year={2010},
  volume={31},
  pages={234-236}
}
We present in this letter the most aggressive dimensions reported to date in Ge-channel transistors: pMOSFETs with 30-nm gate length on ultrathin germanium-on-insulator substrates (TGe = 25 nm). By improving both the Ge-enrichment technique and the transistor fabrication process, we demonstrate devices with controlled threshold voltage (Vth) and excellent short-channel effects. Moreover, the low defectivity and the very low thickness of the Ge film lead to a record drain OFF-state leakage for… CONTINUE READING
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