Ge technology beyond Si CMOS

  title={Ge technology beyond Si CMOS},
  author={Albert Chin},
To save energy, low voltage operation is the most important criterion for CMOS ICs. To reach this goal, high mobility new channel materials are required for CMOS ICs at 14 nm technology nodes. The high electron mobility InGaAs nMOSFET and high hole mobility Ge pMOSFET were proposed for CMOS at 0.5 V operation, since the poor hole mobility of InGaAs makes it unsuitable for all InGaAs CMOS. However, the epitaxial InGaAs nMOSFET on Si faces fundamental material challenges with large defects and… CONTINUE READING


Publications referenced by this paper.

Comparison of Germanium-on-Insulator CMOS with InGaAs MOSFETs Materials Science in Semiconductor Processing (European Materials

  • A Chin, C Chen, D SYu, H LKao, S PMcAlister, C CChi
  • Research Society)
  • 2006
Highly Influential
10 Excerpts

Interfacial layer dependence on device property of high- TiLaO Ge/Si n-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness

  • W BChen, A Chin
  • Appl. Phys. Lett
  • 2009
2 Excerpts

Low Vt gate-first Al/TaN/[Ir3Si-HfSi2x]/HfLaON CMOS using simple process

  • C CLiao, A Chin, N CSu, M FLi, S JWang
  • Symp. on VLSI Tech. Dig
  • 2008
1 Excerpt

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