Ge p-MOSFETs With Scaled ALD $\hbox{La}_{2} \hbox{O}_{3}/\hbox{ZrO}_{2}$ Gate Dielectrics

@article{Henkel2010GePW,
  title={Ge p-MOSFETs With Scaled ALD \$\hbox\{La\}_\{2\} \hbox\{O\}_\{3\}/\hbox\{ZrO\}_\{2\}\$ Gate Dielectrics},
  author={Christoph Henkel and S. Abermann and Ole Bethge and Gianmauro Pozzovivo and Pavel Klang and Manfred Reiche and Emmerich Bertagnolli},
  journal={IEEE Transactions on Electron Devices},
  year={2010},
  volume={57},
  pages={3295-3302}
}
Dielectric thin films of La<sub>2</sub>O<sub>3</sub>/ZrO<sub>2</sub> deposited by atomic layer deposition (ALD) are investigated to be employed in Ge Schottky barrier p-MOSFETs. La<sub>2</sub>O<sub>3</sub> is used as a thin passivation layer and is capped by atomic-layer-deposited ZrO<sub>2</sub> as a gate dielectric. As the gate contact TiN capped by W is… CONTINUE READING