Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm

@article{Warburton2013GeonSiSA,
  title={Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm},
  author={Ryan E. Warburton and Giuseppe Intermite and Maksym Myronov and Phil Allred and David R. Leadley and Kevin Gallacher and Douglas J. Paul and Neil J. Pilgrim and Leon J. M. Lever and Zoran Ikonic and R. W. Kelsall and Edgar Huante-Ceron and Andrew P. Knights and Gerald S. Buller},
  journal={IEEE Transactions on Electron Devices},
  year={2013},
  volume={60},
  pages={3807-3813}
}
The design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented. At 100 K, a single-photon detection efficiency of 4% at 1310 nm wavelength was measured with a dark count rate of ~ 6 megacounts/s, resulting in the lowest reported noise-equivalent power for a Ge-on-Si single-photon avalanche diode detector (1×10-14 WHz-1/2). The first report of 1550 nm wavelength detection efficiency… CONTINUE READING

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References

Publications referenced by this paper.
Showing 1-10 of 32 references

Germanium and InGaAs/InP SPADs for single-photon detection in the near-infrared

A. Tosi, A. Dalla Mora, F. Zappa, S. Cova
Proc. SPIE, vol. 6771, pp. 67710P-1–67710P-8, Sep. 2007. • 2007
View 13 Excerpts
Highly Influenced

Design and performance of an InGaAs-InP single-photon avalanche diode detector

IEEE Journal of Quantum Electronics • 2006
View 5 Excerpts
Highly Influenced

Photonic quantum technologies

2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC • 2013
View 1 Excerpt

A Ge-on-Si single-photon avalanche diode operating in Geiger mode at infrared wavelengths

M. Aminian, A. Sammak, L. Qi, L. K. Nanver, E. Charbon
Proc. SPIE, vol. 8375, pp. 83750Q-1–83750Q-10, Jun. 2012. • 2012
View 1 Excerpt

Characterization of dark current in Ge-on-Si photodiodes

N. A. DiLello, D. K. Johnstone, J. L. Hoyt
J. Appl. Phys., vol. 112, no. 5, pp. 054506-1–054506-8, Sep. 2012. • 2012

Nanofabrication of high aspect ratio (∼50:1) sub-10 nm silicon nanowires using inductively coupled plasma etching

M. M. Mirza, H. Zhou, +5 authors D. J. Paul
J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct., vol. 30, no. 6, pp. 06FF02-1–06FF02-8, Sep. 2012. • 2012
View 1 Excerpt

Ohmic contacts to n-type germanium with low specific contact resistivity

K. Gallacher, P. Velha, +3 authors D. R. Leadley
Appl. Phys. Lett., vol. 100, no. 2, pp. 22113-1–22113-3, Jan. 2012. • 2012
View 1 Excerpt

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