Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm

  title={Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm},
  author={Ryan E. Warburton and Giuseppe Intermite and Maksym Myronov and Phil Allred and David R. Leadley and Kevin Gallacher and Douglas J. Paul and Neil J. Pilgrim and Leon J. M. Lever and Zoran Ikonic and R. W. Kelsall and Edgar Huante-Ceron and Andrew P. Knights and Gerald S. Buller},
  journal={IEEE Transactions on Electron Devices},
The design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented. At 100 K, a single-photon detection efficiency of 4% at 1310 nm wavelength was measured with a dark count rate of ~ 6 megacounts/s, resulting in the lowest reported noise-equivalent power for a Ge-on-Si single-photon avalanche diode detector (1×10-14 WHz-1/2). The first report of 1550 nm wavelength detection efficiency… CONTINUE READING


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