Ge-Core / a-Si-Shell Nanowire-Based Field-Effect Transistor for Sensitive Terahertz Detection

@inproceedings{Deng2018GeCoreA,
  title={Ge-Core / a-Si-Shell Nanowire-Based Field-Effect Transistor for Sensitive Terahertz Detection},
  author={Xiangying Deng and Marolop Simanullang and Yukio Kawano},
  year={2018}
}
Although terahertz technology has demonstrated strong potential for various applications, detectors operating in the terahertz region are yet to be fully established. Numerous designs have been proposed for sensitive terahertz detection, with a nanowire-based field-effect transistor (FET) being one of the most promising candidates. In this study, we use a… CONTINUE READING