Ge/Si nanowire heterostructures as high-performance field-effect transistors

@article{Xiang2006GeSiNH,
  title={Ge/Si nanowire heterostructures as high-performance field-effect transistors},
  author={Jie Xiang and Wei Lu and Yongjie Hu and Yue Wu and Hao Yan and Charles M. Lieber},
  journal={Nature},
  year={2006},
  volume={441},
  pages={489-493}
}
Semiconducting carbon nanotubes and nanowires are potential alternatives to planar metal-oxide-semiconductor field-effect transistors (MOSFETs) owing, for example, to their unique electronic structure and reduced carrier scattering caused by one-dimensional quantum confinement effects. Studies have demonstrated long carrier mean free paths at room temperature in both carbon nanotubes and Ge/Si core/shell nanowires. In the case of carbon nanotube FETs, devices have been fabricated that work… CONTINUE READING
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