Gating currents from a delayed rectifier K+ channel with altered pore structure and function.

@article{Taglialatela1992GatingCF,
  title={Gating currents from a delayed rectifier K+ channel with altered pore structure and function.},
  author={Maurizio Taglialatela and Glenn E. Kirsch and Antonius M. J. VanDongen and J. Anne Drewe and Hali A. Hartmann and Rolf H. Joho and Enrico Stefani and Arthur M. Brown},
  journal={Biophysical journal},
  year={1992},
  volume={62 1},
  pages={34-6}
}
For voltage-sensitive ion channels, charged elements within the membrane electric field are thought to generate displacement or gating currents (1). Topographical models (2-4) have assigned the charged elements or voltage sensor to a fourth transmembrane a-helix (S4) and the models have received support from mutagenesis experiments (5-6). The pore has been assigned to a different region, and in K+ channels, this appears to be the highly-conserved S5-S6 linker (7-9). To test the hypothesis that… CONTINUE READING