Gateless patterning of epitaxial graphene by local intercalation.

@article{Sorger2015GatelessPO,
  title={Gateless patterning of epitaxial graphene by local intercalation.},
  author={Ch Sorger and Silvia Hertel and Johannes Jobst and Carsten Steiner and K Meil and Konrad Ullmann and Anika Christina Albert and Yeliang Wang and Michael Krieger and Juergen Ristein and Sabine Maier and Heiko B Weber},
  journal={Nanotechnology},
  year={2015},
  volume={26 2},
  pages={025302}
}
We present a technique to pattern the charge density of a large-area epitaxial graphene sheet locally without using metallic gates. Instead, local intercalation of the graphene-substrate interface can selectively be established in the vicinity of graphene edges or predefined voids. It provides changes of the work function of several hundred meV, corresponding to a conversion from n-type to p-type charge carriers. This assignment is supported by photoelectron spectroscopy, scanning tunneling… CONTINUE READING
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