Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides

@article{Pompl2006GateVA,
  title={Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides},
  author={T. Pompl and A. Kerber and M. R{\"o}hner and M. Kerber},
  journal={Microelectronics Reliability},
  year={2006},
  volume={46},
  pages={1603-1607}
}
The progressive wear-out of a breakdown path in ultra-thin gate oxides depends on oxide thickness and follows the intrinsic voltage acceleration model of time to breakdown. The quantification of progressive wear-out in this work is the critical step towards product relevant assessment of ultra-thin gate oxides. 

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