Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode.

Abstract

The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from… (More)
DOI: 10.1073/pnas.1317226110

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