Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

@article{Hutin2019GateRF,
  title={Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays},
  author={Louis Hutin and Theodor Lundberg and Alok Chatterjee and Anna Crippa and Jiashen Li and R. Maurand and Xavier Jehl and Marc Sanquer and M. Fernando Gonzalez-Zalba and Ferdinand Kuemmeth and Y-M Niquet and B. Bertrand and Silvano de Franceschi and Matias Urdampilleta and Tristan Meunier and M. Vinet and Emmanuel Chanrion and H. Bohuslavskyi and Fabio Ansaloni and Tae-Youl Yang and Joanna Michniewicz and David J. Niegemann and C. Spence},
  journal={2019 IEEE International Electron Devices Meeting (IEDM)},
  year={2019},
  pages={37.7.1-37.7.4}
}
  • Louis Hutin, Theodor Lundberg, +20 authors C. Spence
  • Published in
    IEEE International Electron…
    2019
  • Physics
  • We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of… CONTINUE READING

    Create an AI-powered research feed to stay up to date with new papers like this posted to ArXiv