• Physics
• Published in
  IEEE Transactions on Electron…
  2004
• DOI:10.1109/TED.2004.829894

Gate oxide reliability under ESD-like pulse stress

@article{Wu2004GateOR,
  title={Gate oxide reliability under ESD-like pulse stress},
  author={J. K. Wu and Elyse Rosenbaum},
  journal={IEEE Transactions on Electron Devices},
  year={2004},
  volume={51},
  pages={1192-1196}
}

• J.K. Wu, Elyse Rosenbaum

The reliability of very thin gate oxide under electrostatic discharge-like pulse stress is investigated. Time-dependent dielectric breakdown of gate oxide with thicknesses ranging from 2.2 to 4.7 nm is characterized down to the nanosecond time regime. The 1/E model best fits the time-to-breakdown data. Self-heating does not need to be incorporated into the time-to-breakdown model. The oxide trap generation rate is a function of the stress pulse-width for nanosecond and microsecond stress pulses… CONTINUE READING

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