Gate-length dependence of DC and microwave properties of submicrometer In/sub 0.53/Ga/sub 0.47/As HIGFETs

Abstract

In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP heterostructure insulated-gate field-effect transistors (HIGFETs) with gate lengths from 1.1 and 0.3 mu m have been fabricated, and their electrical performance is characterized at DC and microwave frequencies. The refractory-gate self-aligned process, applied to devices with In/sub 0.53/Ga/sub 0.47… (More)

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