Gate leakage current mechanisms in AlGaN Õ GaN heterostructure field-effect transistors

@inproceedings{Miller2000GateLC,
  title={Gate leakage current mechanisms in AlGaN {\~O} GaN heterostructure field-effect transistors},
  author={Eric J. Miller and X. Z. Dang and E. T. Yua},
  year={2000}
}
Gate leakage currents in AlGaN/GaN heterostructure field-effect transistor ~HFET! structures with conventional and polarization-enhanced barriers have been studied. Comparisons of extensive gate leakage current measurements with two-dimensional simulations show that vertical tunneling is the dominant mechanism for gate leakage current in the standard-barrier HFET and that the enhanced-barrier structure suppresses this mechanism in order to achieve a reduced leakage current. An analytical model… CONTINUE READING
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