Gate insulator characteristics on the bonded thick SOI wafers for automotive IC applications


For the robustness of harsh environments around automotive ICs, such as negative surge and ESD, the authors have committed the thick SOI BiCDMOS process with trench dielectric isolations. This paper focuses on causes degrading reliability of gate insulators such as silicon dioxides and ONO (Oxide Nitride Oxide) films induced by the process. 


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