Gate-current injection and surface impact ionization in MOSFET's with a gate induced virtual drain

@article{Wong1992GatecurrentIA,
  title={Gate-current injection and surface impact ionization in MOSFET's with a gate induced virtual drain},
  author={H. P. Wong},
  journal={1992 International Technical Digest on Electron Devices Meeting},
  year={1992},
  pages={151-154}
}
  • H. P. Wong
  • Published 1992
  • Physics
  • 1992 International Technical Digest on Electron Devices Meeting
  • In this paper, gate current injection into the gate oxide of MOSFET's with a split-gate (virtual drain) structure is examined. The split-gate structure is commonly employed in flash EEPROM and CCD's. An important parameter characterizing the gate current injection is the ratio phi /sub b// phi /sub i/ (where phi /sub b/ is the effective energy barrier for electron injection into gate oxide, and phi /sub i/ is the impact ionization energy). We present new experimental data of the ratio phi /sub… CONTINUE READING
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