Gate-controlled conductance enhancement from quantum Hall channels along graphene p–n junctions

@article{Tvri2016GatecontrolledCE,
  title={Gate-controlled conductance enhancement from quantum Hall channels along graphene p–n junctions},
  author={Endre T{\'o}v{\'a}ri and P{\'e}ter Makk and Ming-Hao Liu and Peter Rickhaus and Zolt{\'a}n Kov{\'a}cs-Krausz and Klaus Richter and Christian Sch{\"o}nenberger and Szabolcs Csonka},
  journal={Nanoscale},
  year={2016},
  volume={8},
  pages={19910 - 19916}
}
The conductance enhancement of QH states propagating far from disordered edges is directly observed. Separate biasing of channels, and gate-controlled transmission to contacts is demonstrated. 

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References

SHOWING 1-10 OF 81 REFERENCES

The nature of localization in graphene under quantum Hall conditions

The effect of disorder in conventional two-dimensional electron systems is usually described in terms of individual electrons interacting with an underlying disorder potential. Scanning

Multicomponent fractional quantum Hall effect in graphene

Transferring graphene onto hexagonal boron nitride enables high-mobility multiterminal quantum Hall devices to be built. This makes it possible to study graphene's unique fractional quantum Hall

Quantum Hall conductance of two-terminal graphene devices

Measurement and theory of the two-terminal conductance of monolayer and bilayer graphene in the quantum Hall regime are compared. We examine features of conductance as a function of gate voltage that

Electronic transport and quantum hall effect in bipolar graphene p-n-p junctions.

A series of fractional quantum Hall conductance plateaus at high magnetic fields as the local charge density is varied in the p and n regions are observed, which exhibit sensitivity to interedge backscattering which is found to be strong for some of the plateaus and much weaker for other plateaus.

Electronic transport in mesoscopic systems

1. Preliminary concepts 2. Conductance from transmission 3. Transmission function, S-matrix and Green's functions 4. Quantum Hall effect 5. Localisation and fluctuations 6. Double-barrier tunnelling

Conductance of p-n-p graphene structures with "air-bridge" top gates.

Graphene devices with a top gate separated from the graphene layer by an air gap-a design which does not decrease the mobility of charge carriers under the gate are fabricated.

Quantized Transport in Graphene p-n Junctions in a Magnetic Field

This work explains the observed conductance quantization, which is fractional in the bipolar regime and an integer in the unipolar regime, in terms of quantum Hall edge modes propagating along and across the p-n interface.

Four-terminal phase-coherent conductance.

A conductance formula for a sample of arbitrary shape with four terminals is derived to describe transport in the limit where carriers can traverse the sample without suffering phase-destroying

Charge accumulation at the boundaries of a graphene strip induced by a gate voltage: Electrostatic approach

The distribution of charge induced by a gate voltage in a graphene strip is investigated. We analytically calculate the charge profile and demonstrate a strong (macroscopic) charge accumulation along

Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene

The realization of a single-layer graphene p-n junction is reported in which carrier type and density in two adjacent regions are locally controlled by electrostatic gating, consistent with recent theory.
...