Gate control, surface leakage currents, and peripheral charging in AlGaN/GaN heterostructure field effect transistors having nanometer-scale schottky gates

@article{Kasai2006GateCS,
  title={Gate control, surface leakage currents, and peripheral charging in AlGaN/GaN heterostructure field effect transistors having nanometer-scale schottky gates},
  author={Seiya Kasai and Junji Kotani and Tamotsu Hashizume and Hideki Hasegawa},
  journal={Journal of Electronic Materials},
  year={2006},
  volume={35},
  pages={568-575}
}
Gate control properties together with gate leakage currents in AlGaN/GaN heterostructure field effect transistors (HFETs) with nanometer-scale Schottky gates were investigated, focusing on the effects of AlGaN surfaces at the gate periphery. Fabricated AlGaN/GaN HFETs showed unexpectedly small gate length (LG) dependence of transconductance, gm. Comparing the transfer characteristics from theory and experiment, effective LG values in the fabricated devices were found to be much longer than the… CONTINUE READING
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