Gate capacitance modeling in (100), (110) and (111) oriented nanoscale MOSFET substrates

Abstract

An analytical model for the inversion layer quantization for nanoscale- metal oxide semiconductor field effect transistor (MOSFETs) with different crystallographic substrate orientations, such as (100), (110) and (111) has been developed. The C-V and threshold analysis has been studied using the quantum inversion charge model under three substrate… (More)

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Cite this paper

@article{Chaudhry2010GateCM, title={Gate capacitance modeling in (100), (110) and (111) oriented nanoscale MOSFET substrates}, author={Amit Chaudhry and Janine Roy}, journal={International Conference on Electrical & Computer Engineering (ICECE 2010)}, year={2010}, pages={218-221} }