Gate-all-around silicon nanowire MOSFETs and circuits

Abstract

We demonstrate undoped-body, gate-all-around (GAA) Si nanowire (NW) MOSFETs with excellent electrostatic scaling. These NW devices, with a TaN/Hf-based gate stack, have high drive-current performance with NFET/PFET I<inf>DSAT</inf> = 825/950 &#x00B5;A/&#x00B5;m (circumference-normalized) or 2592/2985 &#x00B5;A/&#x00B5;m (diameter-normalized) at supply… (More)

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10 Figures and Tables