Gate-all-around Si nanowire array tunnelling FETs with high on-current of 75 µA/µm @ VDD=1.1V

Abstract

Gate-all-around Si nanowire array p-type tunneling field effect transistors (GAA NW p-TFETs) have been fabricated on thin SOI. High on-current of 75 μA/μm at V<sub>D</sub>=V<sub>G</sub>=1.1V (=V<sub>DD</sub>) was observed. Asymmetric junctions were formed to suppress ambipolar switching typical for all silicon TFETs. Nickel aluminum silicide NiAl<sub>0.2… (More)

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