Gate Voltage Control of Transition Metal Dichalcogenide Monolayers Quantum Yield

@inproceedings{Strikha2019GateVC,
  title={Gate Voltage Control of Transition Metal Dichalcogenide Monolayers Quantum Yield},
  author={Maksym V. Strikha and Anatolii I. Kurchak and Anna N. Morozovska},
  year={2019}
}
Two-dimensional transition metal dichalcogenide (2D-TMD) monolayers, which reveal remarkable semiconductor properties, are the subject of active experimental research. It should be noted that, unlike bulk TDMs, which are indirect-band semiconductors, 2D-TMD monolayers have the extreme points of the conduction and valence bands at the same K and K' points of the Brillouin zone. Therefore they are direct-band semiconductors and can claim to be widely used in optoelectronics devices. Recently it… 

Figures from this paper

References

SHOWING 1-10 OF 25 REFERENCES

Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors

It is shown that the photoluminescence quantum yield of as-processed MoS2 and WS2 monolayers reaches near-unity when they are made intrinsic through electrostatic doping, without any chemical passivation.

Photocarrier relaxation in two-dimensional semiconductors

Two-dimensional (2D) crystals of semiconducting transition metal dichalcogenides (TMD) absorb a large fraction of incident photons in the visible frequencies despite being atomically thin. It has

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2.

The first direct observation of the transition from indirect to direct bandgap in monolayer samples is reported by using angle-resolved photoemission spectroscopy on high-quality thin films of MoSe2 with variable thickness, grown by molecular beam epitaxy.

Novel doping alternatives for single-layer transition metal dichalcogenides

Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study

Tuning the electronic properties of semiconducting transition metal dichalcogenides by applying mechanical strains.

The results suggest that mechanical strains reduce the band gap of semiconducting TMDs causing an direct-to-indirect band gap and a semiconductor- to-metal transition, and highlight the importance of tensile and pure shear strains in tuning the electronic properties of T MDs.

Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers.

This work discovers that mechanical deformations provide a route to switching thermodynamic stability between a semiconducting and a metallic crystal structure in these monolayer materials and finds that MoTe2 is an excellent candidate phase change material.

Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2-BaTiO3-SrRuO3 Tunnel Junctions.

A symbiotic interplay between spontaneous polarization of the ultrathin BaTiO3 ferroelectric film and conductivity of the adjacent molybdenum disulfide (MoS2) layer, a 2D narrow-bandgap semiconductor, is demonstrated.

Reconfiguring crystal and electronic structures of MoS2 by substitutional doping

The authors investigate the structural and electronic effects of Nb doping in MoS2 crystals, which induces a structural transformation from naturally occurring 2H stacking to 3R stacking and produces strong and broadband photoluminescence via the formation of exciton complexes tightly bound to neutral acceptors.

Nontrivial temperature behavior of the carrier concentration in the nanostructure "graphene channel on ferroelectric substrate with domain walls"

This work explores a nontrivial temperature behavior of the carriers concentration, which governs graphene channel conductance in the nano-structure "graphene channel on ferroelectric substrate" that

Room Temperature Semiconductor-Metal Transition of MoTe2 Thin Films Engineered by Strain.

The demonstrated strain-modulation of the phase transition temperature is expected to be compatible with other T MDs enabling the 2D electronics utilizing polymorphism of TMDs along with the established materials.