Gate Voltage Control of Transition Metal Dichalcogenide Monolayers Quantum Yield

  title={Gate Voltage Control of Transition Metal Dichalcogenide Monolayers Quantum Yield},
  author={Maksym V. Strikha and Anatolii I. Kurchak and Anna N. Morozovska},
Two-dimensional transition metal dichalcogenide (2D-TMD) monolayers, which reveal remarkable semiconductor properties, are the subject of active experimental research. It should be noted that, unlike bulk TDMs, which are indirect-band semiconductors, 2D-TMD monolayers have the extreme points of the conduction and valence bands at the same K and K' points of the Brillouin zone. Therefore they are direct-band semiconductors and can claim to be widely used in optoelectronics devices. Recently it… 

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