Gate-All-Around n-MOSFETs With Uniaxial Tensile Strain-Induced Performance Enhancement Scalable to Sub-10-nm Nanowire Diameter

@article{Hashemi2009GateAllAroundNW,
  title={Gate-All-Around n-MOSFETs With Uniaxial Tensile Strain-Induced Performance Enhancement Scalable to Sub-10-nm Nanowire Diameter},
  author={Pouya Hashemi and Leonardo Gomez and J. L. Hoyt},
  journal={IEEE Electron Device Letters},
  year={2009},
  volume={30},
  pages={401-403}
}
The effects of high-level uniaxial tensile strain on the performance of gate-all-around (GAA) Si n-MOSFETs are investigated for nanowire (NW) diameters down to 8 nm. Suspended strained-Si NWs with ~2-GPa uniaxial tension were realized by nanopatterning-induced unilateral relaxation of ultrathin-body 30% strained-Si-directly-on-insulator substrates. Based on these NWs, GAA strained-Si n-MOSFETs were fabricated with a Si thickness of ~8 nm and NW widths in the range of 50 nm down to 8 nm. The GAA… CONTINUE READING