Gas source molecular beam epitaxy grown InGaAs(P)N-InP long-wavelength (/spl lambda/>1.65 μm) photodetectors using a solid arsenic source

@article{Wei2001GasSM,
  title={Gas source molecular beam epitaxy grown InGaAs(P)N-InP long-wavelength (/spl lambda/>1.65 μm) photodetectors using a solid arsenic source},
  author={Jian Wei and W. Lin and K. J. Thomson and S B Forrest},
  journal={IEEE Photonics Technology Letters},
  year={2001},
  volume={13},
  pages={352-354}
}
We demonstrate InGaAs(P)N-InP-based long-wavelength (/spl lambda/>1.65 /spl mu/m) p-i-n photodetectors grown lattice-matched to InP substrates using a solid As source. The background doping level in the absorption layer is significantly reduced from (5.0/spl plusmn/0.3)/spl times/10/sup 17/ cm/sup -3/ for gas source As grown devices to (3.5/spl plusmn/0.5)/spl times/10/sup 16/ cm/sup -3/ for solid source As grown devices with the same cutoff wavelength of 1.85 /spl mu/m. The external quantum… CONTINUE READING