Gas-phase silicon micromachining with xenon difluoride

@inproceedings{Chang1995GasphaseSM,
  title={Gas-phase silicon micromachining with xenon difluoride},
  author={Floy I. Chang and Richard Yeh and Gisela Lin and Patrick B. Chu and Eric G. Hoffman and E. Kruglick and Kristofer S. J. Pister and Michael H. Hecht},
  booktitle={Photonics West - Micro and Nano Fabricated Electromechanical and Optical Components},
  year={1995}
}
Xenon difluoride is a gas phase, room temperature, isotropic silicon etchant with extremely high selectivity to many materials commonly used in microelectromechancial systems, including photoresists, aluminum, and silicon dioxide. Using a simple vacuum system, the effects of etch aperture and loading were explored for etches between 10 and 200 micrometers . Etch rates as high as 40 micrometers /minute were observed. Initial characteriation of wafer surface temperature during the etch indicates… Expand
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