Gas-phase silicon micromachining with xenon difluoride

  title={Gas-phase silicon micromachining with xenon difluoride},
  author={Floy I. Chang and Richard Yeh and Gisela Lin and Patrick B. Chu and Eric G. Hoffman and E. Kruglick and Kristofer S. J. Pister and Michael H. Hecht},
  booktitle={Photonics West - Micro and Nano Fabricated Electromechanical and Optical Components},
Xenon difluoride is a gas phase, room temperature, isotropic silicon etchant with extremely high selectivity to many materials commonly used in microelectromechancial systems, including photoresists, aluminum, and silicon dioxide. Using a simple vacuum system, the effects of etch aperture and loading were explored for etches between 10 and 200 micrometers . Etch rates as high as 40 micrometers /minute were observed. Initial characteriation of wafer surface temperature during the etch indicates… 

Controlled pulse-etching with xenon difluoride

  • P. ChuJ. Chen S.J. Pister
  • Physics
    Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97)
  • 1997
A gas-phase, room-temperature, plasmaless isotropic etching system has been used for bulk and thin film silicon etching. A computer controlled multi-chambered etcher is used to provide precisely

Gas phase pulse etching of silicon for MEMS with xenon difluoride

An inexpensive, small, vacuum system is described for 'pulse etching' single crystal silicon wafers (standard CMOS substrates) for releasing microelectromechanical systems (MEMS) devices.

Gas-phase silicon etching with bromine trifluoride

We report the first study of gas phase silicon micromachining using pure bromine trifluoride (BrF/sub 3/) gas at room temperature. This work includes both the design of a new apparatus and etching

Undercut Compensation for Xenon Difluoride Etching of Polysilicon Thin-films

This paper presents a new undercut compensation etch technique that provides better control over lateral undercutting of polysilicon thin-films using xenon difluoride (XeF2) vapour as the etchant. A

Extreme Narrow Gap Surface Micromachined Pirani Pressure Sensor

  • K. KhosravianiA. Leung
  • Engineering
    TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference
  • 2007
This paper presents an innovative surface micromachined Pirani pressure sensor with an extreme narrow gap and with atmospheric operating pressure range. By using a very thin layer of sputtered

Characteristics of Silicon Nitride Reaction to Vapor-phase HF Gas Treatment

Evidence has been presented that the mixed anhydrous hydrogen fluoride (HF) and methanol (CH3OH) gas, which is used for dry etching the sacrificial layer of silicon dioxide film, deteriorates silicon

Bulk micromachining of silicon

Bulk silicon etching techniques, used to selectively remove silicon from substrates, have been broadly applied in the fabrication of micromachined sensors, actuators, and structures. Despite the more

Thin beam bulk micromachining based on RIE and xenon difluoride silicon etching

  • R. TodaK. MinamiM. Esashi
  • Engineering
    Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97)
  • 1997
A new process for fabricating thin mechanical beam structures from single crystal silicon is developed. Lateral and vertical dimensions of the beam can be precisely defined. The beam is positioned in

Manipulating Etch Selectivities in XeF₂ Vapour Etching

The vapour etching of silicon sacrificial layers is often a critical process in the fabrication of micro/nanosystems. This method has a number of attractive features, in particular, high etch rates



The etching of silicon with XeF2 vapor

It is shown that silicon is isotropically etched by exposure to XeF2(gas) at T=300 K. Si etch rates as large as 7000 A/min were observed for P (XeF2) <1.4×10−2 Torr and the etch rate varies linearly

3D structures with piezoresistive sensors in standard CMOS

Aluminum hinges and polysilicon piezoresistors have been fabricated in a standard commercial CMOS process with one maskless post-processing step. The hinges and piezoresistors are formed using the

A reinvestigation of the etch products of silicon and XeF2: Doping and pressure effects

The gas‐phase etch products of silicon and XeF2 have been studied as a function of doping and XeF2 flux using molecular beam mass‐phase spectrometry. In this experiment the product flux, not the

Fluorine Compounds of Xenon and Radon

The heaviest "inert gas," radon, also reacts with fluorine, yielding a compound less volatile than xenon tetrafluoride.

Silicon as a mechanical material

This review describes the advantages of employing silicon as a mechanical material, the relevant mechanical characteristics of silicon, and the processing techniques which are specific to micromechanical structures.

pH-controlled TMAH Etchants For Silicon Micromachining

  • O. Tabata
  • Engineering
    Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95
  • 1995
The etching characteristics of pH-controlled tetramethyl ammonium hydroxide (TMAH) by dissolving Si or acid have been studied. TMAH with 10 and 22 wt.% at 80/spl deg/C were used as etchants, (NH/sub

Xenon hexafiuoroplatinate(v) Xe{PtF6]," Proceedings ofthe Chemical Society, p

  • 218, London, June
  • 1962

XeF2 and F-atom reactions with Si: their significance for plasma etching," Solid State Technology, pp

  • 117-121, April
  • 1983