Gas-assisted electron-beam-induced nanopatterning of high-quality Si-based insulator.


An oxygen-assisted electron-beam-induced deposition (EBID) process, in which an oxygen flow and the vapor phase of the precursor, tetraethyl orthosilicate (TEOS), are both mixed and delivered through a single needle, is described. The optical properties of the SiO(2+δ) (- 0.04 ≤ δ ≤ +0.28) are comparable to fused silica. The electrical resistivity of both single-needle and double-needle SiO(2+δ) are comparable (greater than 7 GΩ cm) and a measured breakdown field is greater than 400 V μm(-1). Compared to the double-needle process the advantage of the single-needle technique is the ease of alignment and the proximity to the deposition location, which facilitates fabrication of complex 3D structures for nanophotonics, photovoltaics, micro- and nano-electronics applications.

DOI: 10.1088/0957-4484/25/15/155301

Cite this paper

@article{Riazanova2014GasassistedEN, title={Gas-assisted electron-beam-induced nanopatterning of high-quality Si-based insulator.}, author={Anastasia V Riazanova and Barry N Costanzi and Andrey I Aristov and Yuri G M Rikers and Valter Str{\"{o}m and Johannes J.L. Mulders and Andrei V. Kabashin and Emelie Dahlberg and Lyubov M Belova}, journal={Nanotechnology}, year={2014}, volume={25 15}, pages={155301} }