Gas‐phase transport of WF6 through annular nanopipes in TiN during chemical vapor deposition of W on TiN/Ti/SiO2 structures for integrated circuit fabrication

@article{Ramanath1996GasphaseTO,
  title={Gas‐phase transport of WF6 through annular nanopipes in TiN during chemical vapor deposition of W on TiN/Ti/SiO2 structures for integrated circuit fabrication},
  author={Ganapathiraman Ramanath and J. R. A. Carlsson and Joseph E. Greene and Leslie H. Allen and Verne Hornback and Derryl D. J. Allman},
  journal={Applied Physics Letters},
  year={1996},
  volume={69},
  pages={3179-3181}
}
Delamination of TiN/Ti bilayers on SiO2 is a serious problem during W chemical vapor deposition (CVD) using WF6 to form vertical interconnects in integrated circuits. In order to obtain insight into the delamination mechanism, we have determined depth‐distributions of W and F in sputter‐deposited TiN/Ti bilayers on SiO2 as a function of WF6 exposure time tWF6 at 445 °C. Even for tWF6<6 s, significant concentrations of both W (≊3.5 at. %) and F (≊2 at. %) penetrate through the 106‐nm‐thick TiN… 

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