GalnAsP/l Short Cavity Laser Diodes With Facet Mirrors Etched By Chlorine Gas Reactive Ion Beam Etching

@article{Iwase1991GalnAsPlSC,
  title={GalnAsP/l Short Cavity Laser Diodes With Facet Mirrors Etched By Chlorine Gas Reactive Ion Beam Etching},
  author={Masayuki Iwase and Naoya Matsumoto and Noriyuki Yokouchi},
  journal={LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics},
  year={1991},
  pages={47-48}
}
Ultra low-threshold-lasers have the advantages of zero-bias modulation and reduced heat dissipation in high-packing-density components such as OEICs. Low threshold current operation can be achieved by a combination of short cavity length and highly reflective (HR) coating in a quantum well laser diode (QW LD), especially in a strained-layer (SL) QW LD1) since (SL) QW LDs provide a low transparency current and a low internal loss. Dry etching technique is the most suitable method to fabricate… CONTINUE READING

References

Publications referenced by this paper.

Cross-sectional view of a short cavity etched-mirror laser diode. (a) Whole view and (b) etched facet. E @c=20.5% de=19.5% cw 19°C L=23Ob m z

NI.A. Bosch
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