Gallium nitride electronics: Watt is the limit? [summary of GaN semiconductor devices]

@article{Mishra2004GalliumNE,
  title={Gallium nitride electronics: Watt is the limit? [summary of GaN semiconductor devices]},
  author={Us. Mishra},
  journal={Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.},
  year={2004},
  pages={3-5 vol.1}
}
This work presents a summary of the use of gallium nitride and its alloys in the development of semiconductor devices. It begins with a description of the HEMT and its use in microwave and power switching applications. Then follows a brief examination of MOSHFETs, MISHFETs and MISFETs. HBTs are discussed, along with the problems of poor electronic properties of p-type GaN and leakage through p-n junctions and etched surfaces. The paper concludes by referring to the POLFET which is based on… CONTINUE READING