Gallium Nitride ( GaN ) Technology Overview EFFICIENT POWER CONVERSION SilicON POwer MOSFeTS

@inproceedings{LidowGalliumN,
  title={Gallium Nitride ( GaN ) Technology Overview EFFICIENT POWER CONVERSION SilicON POwer MOSFeTS},
  author={Alex Lidow and Johan Strydom}
}
For over three decades, power management efficiency and cost showed steady improvement as innovations in power MOSFET structures, technology, and circuit to-pologies paced the growing need for electrical power in our daily lives. In the new millennium, however, the rate of improvement slowed as the silicon power MOSFET asymptotically approached its theoretical bounds. Power MOSFETs first started appearing in 1976 as alternatives to bipolar transistors. These majority carrier devices were faster… CONTINUE READING

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