Gain Switching of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon

@article{Hantschmann2018GainSO,
  title={Gain Switching of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon},
  author={Constanze Hantschmann and Peter P. Vasil'ev and Siming Chen and Mengya Liao and Alwyn J. Seeds and Huiyun Liu and Richard V. Penty and Ian H. White},
  journal={Journal of Lightwave Technology},
  year={2018},
  volume={36},
  pages={3837-3842}
}
We report the first demonstration of gain-switched optical pulses generated by continuous-wave 1.3 μm InAs/GaAs quantum dot (QD) broad-area lasers directly grown on silicon. The shortest observed pulses have typical durations between 175 and 200 ps with peak output powers of up to 66 mW. By varying the drive current pulsewidth and amplitude systematically, we find that the peak optical power is maximized through sufficiently long high-amplitude drive pulses, whereas shorter drive pulses with… CONTINUE READING
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