Gain Switching of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon

@article{Hantschmann2018GainSO,
  title={Gain Switching of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon},
  author={C. Hantschmann and P. Vasil'ev and S. Chen and M. Liao and Alwyn J. Seeds and H. Liu and R. Penty and I. White},
  journal={Journal of Lightwave Technology},
  year={2018},
  volume={36},
  pages={3837-3842}
}
  • C. Hantschmann, P. Vasil'ev, +5 authors I. White
  • Published 2018
  • Mathematics
  • Journal of Lightwave Technology
  • We report the first demonstration of gain-switched optical pulses generated by continuous-wave 1.3 μm InAs/GaAs quantum dot (QD) broad-area lasers directly grown on silicon. The shortest observed pulses have typical durations between 175 and 200 ps with peak output powers of up to 66 mW. By varying the drive current pulsewidth and amplitude systematically, we find that the peak optical power is maximized through sufficiently long high-amplitude drive pulses, whereas shorter drive pulses with… CONTINUE READING

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    References

    Publications referenced by this paper.
    SHOWING 1-10 OF 52 REFERENCES
    Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon.
    • 24
    • Highly Influential
    Electrically pumped continuous-wave III–V quantum dot lasers on silicon
    • 411
    • PDF
    High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si
    • 72
    Fast phenomena in semiconductor lasers
    • 70
    High performance continuous wave 1.3 μm quantum dot lasers on silicon
    • 249