GaSb-based mid-infrared 2–5 μm laser diodes

@inproceedings{Joulli2003GaSbbasedM2,
  title={GaSb-based mid-infrared 2–5 μm laser diodes},
  author={Andr{\'e} Joulli{\'e} and Philippe Christol},
  year={2003}
}
  • André Joullié, Philippe Christol
  • Published 2003
  • Materials Science, Physics
  • Laser diodes emitting at room temperature in continuous wave regime (CW) in the mid-infrared (2–5 μm spectral domain) are needed for applications such as high sensitivity gas analysis by tunable diode laser absorption spectroscopy (TDLAS) and environmental monitoring. Such semiconductor devices do not exist today, with the exception of type-I GaInAsSb/AlGaAsSb quantum well laser diodes which show excellent room temperature performance, but only in the 2.0–2.6 μm wavelength range. Beyond 2.6 μm… CONTINUE READING

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