GaN transistor-based Class E power amplifier for the low L-band

Abstract

A GaN HEMT-based Class E power amplifier to work in the low L-band has been designed, built and measured. Measurements exhibit a 74% Power Added Efficiency and a 15W output power performance. The prototype has been tested under continuous wave excitation, two tone input signal and a constant envelope modulated signal used for the E5 band (1.19 GHz) of the… (More)

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Cite this paper

@article{NgMolina2011GaNTC, title={GaN transistor-based Class E power amplifier for the low L-band}, author={F. Yak Ng-Molina and T. M. Martin-Guerrero and Carlos Camacho-Pe{\~n}alosa and J. A. Garc{\'i}a and Javier Mata-Contreras}, journal={2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits}, year={2011}, pages={1-4} }