GaN power switching devices

@article{Ishida2010GaNPS,
  title={GaN power switching devices},
  author={Masahiro Ishida and Yasuhiro Uemoto and Tetsuzo Ueda and Tsuyoshi Tanaka and Daisuke Ueda},
  journal={The 2010 International Power Electronics Conference - ECCE ASIA -},
  year={2010},
  pages={1014-1017}
}
State-of-the-art device technologies of GaN power switching transistors are reviewed. The presented technologies solve the technical issues on GaN transistors for practical use replacing currently used Si-based power devices. Thick epitaxial growth over 6-inch Si substrates enables low cost fabrication of GaN devices with high breakdown voltages. A new operating principle for the normally-off GaN transistor called Gate Injection Transistor (GIT) is proposed in which hole injection from the p… CONTINUE READING
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