GaN microdisk light emitting diodes

  title={GaN microdisk light emitting diodes},
  author={S. X. Jin and J. Li and J. Z. Li and Jingyu Lin and Hongxing Jiang},
  journal={Applied Physics Letters},
Microdisk light-emitting diodes (μ-LEDs) with diameter of about 12 μm have been fabricated from InGaN/GaN quantum wells. Photolithographic patterning and inductively coupled plasma dry etching have been employed to fabricate these μ-LED devices. Device characteristics, such as the current–voltage characteristics, light output power, and electroluminescence (EL) spectra have been measured and compared with those of conventional broad-area LEDs. Our results showed that, for an identical area, the… 

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