GaN microdisk light emitting diodes

@article{Jin2000GaNML,
  title={GaN microdisk light emitting diodes},
  author={S. Jin and J. M. Li and J. Li and J. Lin and H. Jiang},
  journal={Applied Physics Letters},
  year={2000},
  volume={76},
  pages={631-633}
}
  • S. Jin, J. M. Li, +2 authors H. Jiang
  • Published 2000
  • Physics
  • Applied Physics Letters
  • Microdisk light-emitting diodes (μ-LEDs) with diameter of about 12 μm have been fabricated from InGaN/GaN quantum wells. Photolithographic patterning and inductively coupled plasma dry etching have been employed to fabricate these μ-LED devices. Device characteristics, such as the current–voltage characteristics, light output power, and electroluminescence (EL) spectra have been measured and compared with those of conventional broad-area LEDs. Our results showed that, for an identical area, the… CONTINUE READING
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