GaN microdisk light emitting diodes

@article{Jin2000GaNML,
  title={GaN microdisk light emitting diodes},
  author={S. X. Jin and J. Li and J. Z. Li and Jingyu Lin and Hongxing Jiang},
  journal={Applied Physics Letters},
  year={2000},
  volume={76},
  pages={631-633}
}
Microdisk light-emitting diodes (μ-LEDs) with diameter of about 12 μm have been fabricated from InGaN/GaN quantum wells. Photolithographic patterning and inductively coupled plasma dry etching have been employed to fabricate these μ-LED devices. Device characteristics, such as the current–voltage characteristics, light output power, and electroluminescence (EL) spectra have been measured and compared with those of conventional broad-area LEDs. Our results showed that, for an identical area, the… 

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References

SHOWING 1-10 OF 15 REFERENCES
Optical properties of GaN/AlGaN multiple quantum well microdisks
An array of microdisks with a diameter of about 9 μm and spacing of 50 μm has been fabricated by dry etching from a 50 A/50 A GaN/AlxGa1-xN (x∼0.07) multiple quantum well (MQW) structure grown by
Stimulated emission and lasing in whispering-gallery modes of GaN microdisk cavities
We report optically pumped, pulsed lasing action in whispering-gallery modes of GaN microdisk cavities at room temperature. The microdisk structure was fabricated by reactive-ion etching a 2-μm-thick
OPTICAL RESONANCE MODES IN GAN PYRAMID MICROCAVITIES
An array of GaN hexagonal pyramids with a side length of 8.0 μm was fabricated by selective epitaxial overgrowth. These microsized pyramids are highly efficient microcavities. Three types of optical
Optical modes within III-nitride multiple quantum well microdisk cavities
Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 A/50 A GaN/AlxGa1−xN(x∼0.07) and 45 A/45 A InxGa1−xN/GaN(x∼0.15) multiple quantum well structures.
Room temperature lasing at blue wavelengths in gallium nitride microcavities
TLDR
The result suggests that practical blue vertical cavity surface-emitting lasers can be realized in gallium-nitride-based material systems.
Optical processes in microcavities
The dielectric microstructures act as ultrahigh Q factors optical cavities, which modify the spontaneous emission rates and alter the spatial distribution of the input and output radiation. The
LASER ACTION IN GAN PYRAMIDS GROWN ON (111) SILICON BY SELECTIVE LATERAL OVERGROWTH
Laser action was observed in GaN pyramids under strong optical pumping at room temperature. The pyramids were laterally overgrown on a patterned GaN/AlN seeding layer grown on a (111) silicon
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
In the past several years, research in each of the wide‐band‐gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each
Appl. Phys. Lett
  • Appl. Phys. Lett
...
...